收藏本站
NTD32N06L
Power MOSFET
32 Amps, 60 Volts
Logic Level, N-Channel DPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
http://onsemi.com
Features
? Smaller Package than MTB30N06VL
? Lower R DS(on) , V DS(on) , and Total Gate Charge
? Lower and Tighter V SD
? Lower Diode Reverse Recovery Time
? Lower Reverse Recovery Stored Charge
? Pb-Free Packages are Available
V DSS
60 V
R DS(ON) TYP
23.7 m W
N-Channel
D
I D MAX
32 A
Typical Applications
? Power Supplies
? Converters
? Power Motor Controls
? Bridge Circuits
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
G
S
MARKING DIAGRAMS
& PIN ASSIGNMENTS
Rating
Drain-to-Source Voltage
Symbol
V DSS
Value
60
Unit
Vdc
4
Drain
Drain-to-Gate Voltage (R GS = 10 M W )
V DGR
60
Vdc
4
DPAK
Gate-to-Source Voltage - Continuous
- Non-Repetitive (t p v 10 ms)
Drain Current - Continuous @ T A = 25 ° C
- Continuous @ T A = 100 ° C
- Single Pulse (t p v 10 m s)
Total Power Dissipation @ T A = 25 ° C
Derate above 25 ° C
Total Power Dissipation @ T A = 25 ° C (Note 1)
Total Power Dissipation @ T A = 25 ° C (Note 2)
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche
Energy - Starting T J = 25 ° C (Note 3)
(V DD = 50 Vdc, V GS = 5 Vdc, L = 1.0 mH,
I L(pk) = 25 A, V DS = 60 Vdc, R G = 25 W )
Thermal Resistance
V GS
V GS
I D
I D
I DM
P D
T J , T stg
E AS
" 20
" 30
32
22
90
93.75
0.625
2.88
1.5
-55 to
+175
313
Vdc
Adc
Apk
W
W/ ° C
W
W
° C
mJ
° C/W
1 2
1
2
3
3
4
CASE 369C
(Surface Mount)
STYLE 2
1
Gate
DPAK
CASE 369D
(Straight Lead)
STYLE 2
2
Drain
4
Drain
3
Source
- Junction-to-Case
- Junction-to-Ambient (Note 1)
- Junction-to-Ambient (Note 2)
Maximum Lead Temperature for Soldering
R q JC
R q JA
R q JA
T L
1.6
52
100
260
° C
1 2 3
Gate Drain Source
Purposes, 1/8 in from case for 10 seconds
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to FR4 board using 0.5 in pad size.
2. When surface mounted to FR4 board using minimum recommended pad size.
Y
WW
32N06L
G
= Year
= Work Week
= Device Code
= Pb-Free Package
3. Repetitive rating; pulse width limited by maximum junction temperature.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
? Semiconductor Components Industries, LLC, 2007
June, 2007 - Rev. 5
1
Publication Order Number:
NTD32N06L/D
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
NTD32N06T4G MOSFET N-CH 60V 32A DPAK
NTD3808NT4G MOSFET N-CH 16V 12A DPAK
NTD3813NT4G MOSFET N-CH 16V 9.6A DPAK
NTD3817NT4G MOSFET N-CH 16V 7.6A DPAK
NTD40N03R-1G MOSFET N-CH 25V 7.8A IPAK
NTD4302G MOSFET N-CH 30V 8.4A DPAK
NTD4804N-1G MOSFET N-CH 30V 14.5A IPAK
NTD4805N-1G MOSFET N-CH 30V 12.6A IPAK
相关代理商/技术参数
NTD32N06T4 功能描述:MOSFET 60V 32A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD32N06T4G 功能描述:MOSFET 60V 32A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD35 制造商:EDI 制造商全称:Electronic devices inc. 功能描述:HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS
NTD3808N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 16 V, 76 A, Single N-Channel, DPAK/IPAK
NTD3808N-1G 功能描述:MOSFET N-CH 16V 12A IPAK RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
NTD3808N-35G 功能描述:MOSFET N-CH 16V 12A IPAK RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
NTD3808NT4G 功能描述:MOSFET N-CH 16V 12A DPAK RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
NTD3813N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 16 V, 51 A, Single N-Channel, DPAK/IPAK